Kingston 4GB 1600MHz DDR3L PC3-12800 SODIMM Laptop Memory

CL(IDD): 11 cycles Row Cycle Time (tRCmin): 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin): 260ns (min.) Row Active Time (tRASmin): 35ns (min.) Maximum Operating Power: (1.35V) = 2.376 W* UL Rating: 94 V – 0 Operating Temperature: 0°C to 85°C Storage Temperature -55°C to 100°C JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL – 2, or CL – 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C Asynchronous Reset PCB: Height1.18” (30mm), double sided component Lead Free RoHS Compliant